FDD86102LZ mosfet equivalent, n-channel mosfet.
General Description
* Shielded Gate MOSFET Technology
* Max rDS(on) = 22.5 mΩ at VGS = 10 V, ID = 8 A
* Max rDS(on) = 31 mΩ at VGS = 4.5 V, ID = 7 A
* H.
* DC - DC Conversion
* Inverter
* Synchronous Rectifier
D
D G
S DTO-P-2A5K2 (TO-252)
G S
MOSFET Maximum .
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